參數(shù)資料
型號(hào): 6MBP150RTJ060
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: IGBT - IPM
中文描述: IGBT的-綜合治理
文件頁(yè)數(shù): 16/22頁(yè)
文件大?。?/td> 1053K
代理商: 6MBP150RTJ060
H04-004-03
22
MS6M 0677
a
16
17-2.Main Circuit Characteristics (Representative)
0
50
100
150
200
250
300
0
0.5
1
1.5
2
2.5
Forward current vs. Forward voltage
(Chip)
125°C
25°C
F
Forward voltage : Vf (V)
0
50
100
150
200
250
300
0
0.5
1
1.5
2
2.5
Forward current vs. Forward voltage
(Terminal)
125°C
25°C
F
Forward voltage : Vf (V)
0
40
80
120
160
200
240
0
0.5
Collector-Emitter voltage : Vce (V)
1
1.5
2
2.5
3
3.5
Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip)
Vcc=13V
Vcc=15V
Vcc=17V
C
0
40
80
120
160
200
240
0
0.5
Collector-Emitter voltage : Vce (V)
1
1.5
2
2.5
3
3.5
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
Vcc=13V
Vcc=15V
Vcc=17V
C
0
40
80
120
160
200
240
0
0.5
Collector-Emitter voltage : Vce (V)
1
1.5
2
2.5
3
3.5
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
Vcc=13V
Vcc=15V
Vcc=17V
C
0
40
80
120
160
200
240
0
0.5
Collector-Emitter voltage : Vce (V)
1
1.5
2
2.5
3
3.5
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Vcc=13V
Vcc=15V
Vcc=17V
C
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參數(shù)描述
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