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參數(shù)資料
| 型號(hào)： | 6N80 |
| 廠商： | IXYS Corporation |
| 英文描述： | N-Channel Enhancement Mode |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | 6N80 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXTH 6N80
IXTM 6N80
IXTH 6N80A
IXTM 6N80A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
6
S
C
iss
C
oss
C
rss
2800
250
100
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
35
40
100
110
200
100
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
,
(External)
100
60
Q
g(on)
Q
gs
Q
gd
110
15
50
130
30
70
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.7
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
6
A
I
SM
Repetitive; pulse width limited by T
JM
24
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
900
ns
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Dim.
Millimeter
Min.
6.4
Inches
Min.
.250
Max.
11.4
3.42
1.09
22.22
11.17
5.71
Max.
.450
.135
.043
.875
.440
.225
A
A1
b
D
e
e1
.97
.038
10.67
5.21
.420
.205
L
p
p1
q
R
R1
s
7.93
3.84
3.84
30.15 BSC
.312
.151
.151
1.187 BSC
4.19
4.19
.165
.165
13.33
4.77
17.14
.525
.188
.675
16.64
.655
TO-204AA (IXTM) Outline
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
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