參數(shù)資料
型號: 6N80
廠商: IXYS Corporation
英文描述: N-Channel Enhancement Mode
中文描述: N溝道增強模式
文件頁數(shù): 4/4頁
文件大小: 87K
代理商: 6N80
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXTH 6N80
IXTM 6N80
IXTH 6N80A
IXTM 6N80A
V
DS
- Volts
1
10
100
1000
I
D
0.1
1
10
Gate Charge - nCoulombs
0
10
20
30
40
50
60
70
80
V
G
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
0
1
2
3
4
5
6
7
8
9
V
CE
- Volts
0
5
10
15
20
25
C
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
0.001
0.01
0.1
1
C
oss
C
rss
C
iss
V
DS
= 500V
I
D
= 3.0A
I
G
= 10mA
Limited by R
DS(on)
10us
100us
1ms
10ms
100ms
Single Pulse
f = 1 MHz
V
DS
= 25V
T
J
= 25°C
T
J
= 125°C
D=0.5
D=0.05
D=0.02
D=0.1
D=0.01
D=0.2
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
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