參數(shù)資料
型號: 71M6543GH-IGTR/F
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 模擬信號調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, PQFP100
封裝: LEAD FREE, LQFP-100
文件頁數(shù): 40/157頁
文件大小: 2178K
代理商: 71M6543GH-IGTR/F
71M6543F/H and 71M6543G/GH Data Sheet
134
2008–2011 Teridian Semiconductor Corporation
v1.2
6.2
Recommended External Components
Table 89: Recommended External Components
Name
From
To
Function
Value
Unit
C1
V3P3A
GNDA
Bypass capacitor for 3.3 V supply
≥0.1 ±20%
F
C2
V3P3D
GNDD
Bypass capacitor for 3.3 V output
0.1
±20%
F
CSYS
V3P3SYS
GNDD
Bypass capacitor for V3P3SYS
≥1.0 ±30%
F
CVDD
VDD
GNDD
Bypass capacitor for VDD
0.1
±20%
F
CVLCD
VLCD
GNDD
Bypass capacitor for VLCD pin
≥0.1 ±20%
F
XTAL
XIN
XOUT
32.768 kHz crystal – electrically
equivalent to ECS .327-12.5-17X or
Vishay XT26T, load capacitance 12.5 pF
32.768
kHz
CXS
XIN
GNDA
Load capacitor values for crystal depend
on crystal specifications and board
parasitics. Nominal values are based on
4 pF board capacitance and include an
allowance for chip capacitance.
15
±10%
pF
CXL
XOUT
GNDA
10
±10%
pF
6.3
Recommended Operating Conditions
Unless otherwise specified, all parameters listed under 6.4 Performance Specifications and 6.5 Timing
Specifications are valid over the Recommended Operating Conditions provided in Table 90 below.
Table 90: Recommended Operating Conditions
Parameter
Condition
Min
Typ
Max
Unit
V3P3SYS and V3P3A Supply Voltage for precision
metering operation (MSN mode). Voltages at
VBAT and VBAT_RTC need not be present.
VBAT=0 V to 3.8 V
VBAT_RTC =0 V to
3.8 V
3.0
3.6
V
VBAT Voltage (BRN mode). V3P3SYS is below
the 2.8 V comparator threshold. Either V3P3SYS
or VBAT_RTC must be high enough to power the
RTC module.
V3P3SYS < 2.8 V
and
Max(VBAT_RTC,
V3P3SYS) > 2.0 V
2.5
3.8
V
VBAT_RTC Voltage. VBAT_RTC is not needed to
support the RTC and non-volatile memory unless
V3P3SYS<2.0 V
2.0
3.8
V
Operating Temperature
-40
+85
C
Notes:
1.
GNDA and GNDD must be connected together.
2.
V3P3SYS and V3P3A must be connected together.
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