參數(shù)資料
型號(hào): 74LVC163BQ,115
廠商: NXP Semiconductors
文件頁數(shù): 17/20頁
文件大?。?/td> 0K
描述: IC SYNC 4BIT BIN COUNT 16DHVQFN
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 3,000
系列: 74LVC
邏輯類型: 二進(jìn)制計(jì)數(shù)器
方向:
元件數(shù): 1
每個(gè)元件的位元數(shù): 4
復(fù)位: 同步
計(jì)時(shí): 同步
計(jì)數(shù)速率: 150MHz
觸發(fā)器類型: 正邊沿
電源電壓: 1.2 V ~ 3.6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 16-DHVQFN(2.5x3.5)
包裝: 帶卷 (TR)
其它名稱: 74LVC163BQ-G
74LVC163BQ-G-ND
935275615115
74LVC163
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 20 November 2012
6 of 20
NXP Semiconductors
74LVC163
Presettable synchronous 4-bit binary counter; synchronous reset
6.
Functional description
[1]
* = the TC output is HIGH when CET is HIGH and the counter is at terminal count (HHHH)
H = HIGH voltage level
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition
L = LOW voltage level
l = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition
q = lower case letters indicate the state of the referenced output one set-up time prior to the LOW-to-HIGH clock transition
X = don’t care
= LOW-to-HIGH clock transition
7.
Limiting values
[1]
The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2]
The output voltage ratings may be exceeded if the output current ratings are observed.
[3]
For SO16 packages: above 70
C the value of P
tot derates linearly with 8 mW/K.
For (T)SSOP16 packages: above 60
C the value of P
tot derates linearly with 5.5 mW/K.
For DHVQFN16 packages: above 60
C the value of P
tot derates linearly with 4.5 mW/K.
Table 3.
Functional table[1]
Operating
modes
Input
Output
MR
CP
CEP
CET
PE
Dn
Qn
TC
Reset (clear) l
XXX
XL
L
Parallel load
h
XXl
l
L
h
XXl
h
H
*
Count
h
hhh
X
count
*
Hold
(do nothing)
hX
l
X
h
X
qn
*
hX
X
l
h
X
qn
L
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+6.5
V
IIK
input clamping current
VI < 0 V
50
-
mA
VI
input voltage
0.5
+6.5
V
IOK
output clamping current
VO > VCC or VO < 0 V
-
50
mA
VO
output voltage
0.5
VCC + 0.5
V
IO
output current
VO = 0 V to VCC
-
50
mA
ICC
supply current
-
100
mA
IGND
ground current
100
-
mA
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
Tamb = 40 C to +125 C
[3] -500
mW
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