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| 型號： | 75V16F64GS16 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP) |
| 中文描述： | 64兆位閃存和16兆位偽靜態(tài)存儲器堆疊式多芯片封裝（MCP）技術 |
| 文件頁數(shù)： | 15/50頁 |
| 文件大?。?/td> | 255K |
| 代理商： | 75V16F64GS16 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
15
75V16F64GS16
ISSI
FLASH MEMORY AUTOSELECT CODES TABLE
Type
A
21
to A
12
BA
A
6
L
A
3
L
A
2
L
A
1
L
A
0
L
Code (HEX)
04h
Manufacture's Code
Device Code
BA
L
L
L
L
H
227Eh
Extended Device
BA
L
H
H
H
L
2202h
Code
(2)
BA
L
H
H
H
H
2201h
Sector Group
Sector Group
L
L
L
H
L
01h
(1)
Protection
Legend: L = VIL, H = VIH. See “n DC CHARACTERISTICS” for voltage levels.
Notes:
1. Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
2. A read cycle at address (BA) 01h outputs device code. When 227Eh was output, this indicates that there will require two
additional codes, called Extended Device Codes. Therefore the system may continue reading out these Extended Device Codes
at the address of (BA) 0Eh, as well as at (BA) 0Fh.
.
Address
SECTOR ADDRESS GROUP TABLE
(Continued)
Sector
A
21
A
20
A
19
A
18
A
17
A
16
A
15
A
14
A
13
A
12
Sectors
SGA33
SGA34
SGA35
SGA36
SGA37
SGA38
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
1
1
0
1
1
0
0
1
1
0
1
0
1
0
X
X
X
X
X
X
0
0
1
1
1
1
1
1
1
1
1
X
X
X
X
X
X
0
1
0
1
1
1
1
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
SA107 to SA110
SA111 to SA114
SA115 to SA118
SA119 to SA122
SA123 to SA126
SA127 to SA130
SGA39
1
1
1
1
1
X
X
X
SA131 to SA133
SGA40
SGA41
SGA42
SGA43
SGA44
SGA45
SGA46
SGA47
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
SA134
SA135
SA136
SA137
SA138
SA139
SA140
SA141
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