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| 型號： | 75V16F64GS16 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP) |
| 中文描述： | 64兆位閃存和16兆位偽靜態(tài)存儲器堆疊式多芯片封裝（MCP）技術(shù) |
| 文件頁數(shù)： | 16/50頁 |
| 文件大小： | 255K |
| 代理商： | 75V16F64GS16 |
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16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
FLASH MEMORY COMMAND DEFINITIONS
Notes:
1. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
2. This command is valid during Fast Mode.
3. This command is valid while
RESET
= V
ID
4. The valid address is A6 to A0.
5. This command is valid during Hi-ROM mode.
6. The data “00h” is also acceptable.
Command
Sequence
2
1
3
4
4
Bus
Write
Cycle
Req'd
First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus
Cycle Write Cycle Write Cycle Read/Write Cycle Cycle
Data
Read / Reset
(1)
Flash Program
(2)
Erase Resume
Data
Data
Addr.
Addr.
Addr.
Addr.
Data
Addr.
Data
Addr.
Data
Read / Reset
(1)
SPA
60h
SPA
—
SPA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
55h
—
—
—
—
—
—
—
—
—
—
—
F0h
AAh
30h
—
RA
—
—
—
55h
AAh
F0h
—
RD
—
—
—
SD
—
—
40h
88h
BA
XXXh
30h
A0h
90h
98h
55h
Set to Fast
Mode
(2)
Autoselect
Program
Program Suspend
Program Resume
Sector Erase
Erase Suspend
Query
(4)
Hi-ROM
Entry
90h
PA
—
—
55h
B0h
PD
A0h
—
—
3
3
4
1
Extended Sector
(3)
Reset from Flash
Mode
(2)
Hi-ROM
Exit
(5)
555h
AAh
2AAh
55h
555h
A0h
00h
1
Hi-ROM
Program
(5)
Chip Erase
2
3
4
1
1
6
6
1
XXXh
555h
555h
555h
BA
BA
555h
555h
555h
555h
(BA)
55h
AAh
AAh
2AAh
555h
2AAh
(BA)
555h
2AAh
555h
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
AAh
—
—
—
AAh
B0h
2AAh
2AAh
55h
55h
555h
555h
80h
80h
555h
555h
AAh
AAh
2AAh
2AAh
55h
55h
555h
SA
10h
30h
—
—
—
—
—
—
—
—
—
—
BA
B0h
—
—
—
—
—
—
—
—
—
—
60h
555h
AAh
2AAh
55h
555h
20h
XXXh
PA
PD
—
—
—
—
—
—
—
—
BA
XXXh
(6)
F0H
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2AAh
2AAh
55h
555h
555h
(HRBA)
90h
XXXh
PD
—
—
—
—
—
—
—
—
—
—
(HRA)
PA
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