- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360548 > 7MBR15SA-120 MCU CMOS 20LD LOW PWR, 0C to +70C, 20-SSOP 208mil, TUBE PDF資料下載
參數(shù)資料
| 型號(hào)： | 7MBR15SA-120 |
| 英文描述： | MCU CMOS 20LD LOW PWR, 0C to +70C, 20-SSOP 208mil, TUBE |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 833K |
| 代理商： | 7MBR15SA-120 |
H04-004-03a
15
MS6M 0802
a
8
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
-
-
LSL×0.8
-
-
-
Unit
Note
Electrical
characteristic
Leakage current
ICES
±IGES
USL×2
USL×2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
μ
A
mA
V
V
mV
Gate threshold voltage VGE(th)
Saturation voltage
Forward voltage
Thermal
IGBT
resistance
FWD
Isolation voltage
Visual inspection
Peeling
Plating
and the others
VCE(sat)
VF
VGE
or
VCE
VF
Viso
-
USL×1.2
mV
-
Broken insulation
Visual
inspection
-
The visual sample
-
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
shall be made wipe or dry completely before the measurement.
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test Method 101
Number
of
sample
Accept-
ance
number
1 High temperature Test temp.
Reverse Bias
: Ta = 125±5
℃
(Tj
≦
150
℃
)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: Ta = 125
±
5
℃
(Tj
≦
150
℃
)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
:
Tj=100±5 deg
Tj
≦
150
℃
, Ta=25±5
℃
: 15000 cycles
5
( 0 : 1 )
Bias Voltage
Bias Method
Test duration
2 High temperature Test temp.
Bias (for gate)
Test Method 101
5
( 0 : 1 )
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
3 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Test Method 106
5
( 0 : 1 )
Number of cycles
E
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7MBR15SA-140 | MCU CMOS 18LD LOW PWR, -40C to +85C, 18-SOIC 300mil, TUBE |
| 7MBR100SB-060 | MCU CMOS 14LD 1K 20MHz, -40C to +85C, 14-PDIP, TUBE |
| 7MBR20UE-060 | MCU CMOS 18LD .5K EPRM, 0C to +70C, 18-SOIC 300mil, TUBE |
| 7MBR25NE-120 | MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-PDIP, TUBE |
| 7MBR25NF120 | MCU CMOS 20LD .5K EPRM, -40C to +85C, 20-SSOP 208mil, TUBE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR15SA-120-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PACK MOD 1200V 15A M711 制造商:Fuji Electric 功能描述:IGBT, 7 PACK MOD, 1200V, 15A, M711 制造商:Fuji Electric 功能描述:IGBT, 7 PACK MOD, 1200V, 15A, M711; Transistor Type:IGBT Module; DC Collector Current:15A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:24 ;RoHS Compliant: Yes |
| 7MBR15SA120D-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module |
| 7MBR15SA140 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power Integrated Module |
| 7MBR15SA-140 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:7 PIM IGBT |
| 7MBR15SA140_01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。