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參數(shù)資料
| 型號： | 7MBR35SB-140 |
| 英文描述： | MCU CMOS 20LD .5K 20MHz, 0C to +70C, 20-SSOP 208mil, TUBE |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 325K |
| 代理商： | 7MBR35SB-140 |
Electrical characteristics (Tj=25°C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
t
on
t
r
t
off
t
f
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
t
rr
V
FM
I
RRM
V
R
=800V
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
Reverse recovery time
Forward voltage
Reverse current
C
(
I
CES
I
GES
V
GE(th)
V
CE(sat)
-V
CE
C
ies
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=30mA
V
GE
=15V, Ic=30A
-Ic=30A
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=300V
I
C
=30A
V
GE
=±15V
R
G
=82 ohm
I
F
=30A
V
CES
=600V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=30A, V
GE
=15V
V
CC
=300V
I
C
=30A
V
GE
=±15V
R
G
=82ohm
V
R
=600V
I
F
=50A
1.0
20
7.5
2.8
3.0
1.2
0.6
1.0
0.35
0.3
1.0
0.1
2.8
0.8
0.6
1.0
0.35
1.0
0.6
1.55
1.0
1980
4.5
mA
μA
V
V
V
pF
μs
μs
μs
μs
μs
mA
μA
V
μs
μs
μs
μs
mA
μs
V
mA
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
Contact thermal resistance * Rth(c-f)
1.04
2.22
1.04 °C/W
2.10
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Thermal Characteristics
IGBT Module
7MBR30NE060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*
NLU (Over current Limiting circuit)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7MBR35UA-120 | MCU CMOS 20LD .5K 20MHz, -40C to +85C, 20-SSOP 208mil, TUBE |
| 7MBR50NE060 | MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-SOIC 300mil, T/R |
| 7MBR50NF-060 | MCU CMOS 20LD LOW PWR, 0C to +70C, 20-SSOP 208mil, TUBE |
| 7MBR50SB-060 | MCU CMOS 20LD LOW PWR, -40C to +85C, 20-SSOP 208mil, T/R |
| 7MBR50SB-140 | MCU CMOS 18LD LOW VOLT, -40C to +85C, 18-SOIC 300mil, TUBE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR35SB140_0105 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR35SB140-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module |
| 7MBR35SB-140-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PACK MOD 1400V 35A M712 |
| 7MBR35SD120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:PIM/Built-in converter with thyristor and brake |
| 7MBR35SD120_04 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:PIM/Built-in converter with thyristor and brake |
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