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參數(shù)資料
| 型號： | 7MBR35SB-140 |
| 英文描述： | MCU CMOS 20LD .5K 20MHz, 0C to +70C, 20-SSOP 208mil, TUBE |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 325K |
| 代理商： | 7MBR35SB-140 |
IGBT Module
7MBR30NE060
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=300V, RG=82 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=300V, RG=82 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
C
C
50
40
30
20
10
0
0
0 1 2 3 4 5
0 1 2 3 4 5
C
C
10
8
6
4
2
0
0 5 10 15 20 25
0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
S
1000
100
10
0 10 20 30 40 50
Collector current : Ic [A]
Collector current : Ic [A]
S
1000
100
10
60
70
50
40
30
20
10
60
70
0 10 20 30 40 50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7MBR35UA-120 | MCU CMOS 20LD .5K 20MHz, -40C to +85C, 20-SSOP 208mil, TUBE |
| 7MBR50NE060 | MCU CMOS 18LD .5K EPRM, -40C to +85C, 18-SOIC 300mil, T/R |
| 7MBR50NF-060 | MCU CMOS 20LD LOW PWR, 0C to +70C, 20-SSOP 208mil, TUBE |
| 7MBR50SB-060 | MCU CMOS 20LD LOW PWR, -40C to +85C, 20-SSOP 208mil, T/R |
| 7MBR50SB-140 | MCU CMOS 18LD LOW VOLT, -40C to +85C, 18-SOIC 300mil, TUBE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR35SB140_0105 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 7MBR35SB140-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module |
| 7MBR35SB-140-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PACK MOD 1400V 35A M712 |
| 7MBR35SD120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:PIM/Built-in converter with thyristor and brake |
| 7MBR35SD120_04 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:PIM/Built-in converter with thyristor and brake |
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