參數(shù)資料
型號(hào)： 908E621_07
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
中文描述： 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡
文件頁(yè)數(shù)： 34/62頁(yè)
文件大小： 540K
代理商： 908E621_07
Analog Integrated Circuit Device Data
Freescale Semiconductor
34
908E621
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
Figure 18. General purpose / hall-effect sensor input (H0)
Current Coded Hallsensor Input
H0 is selected as “2 pin hallsensor input”, if the
corresponding H0MS bit in the H0/L0 Status and Control
Register (HLSCTL) is set. In this mode the terminal current to
GND is monitored by a special sense circuitry. Setting bit
H0EN in the H0/L0 Status and Control Register switches the
output to VSUP and enable the sense circuitry. The result of
the sense operation is given by the H0F flag. The flag is low
if the sensed current is higher than the sense current
threshold I
HSCT
. In this configuration the HO terminal is
protected (current limitation) against short circuit to GND.
After switching on the hallport (H0EN = “1”) the hallsensor
needs some time to stabilize the output. In RUN mode the
software has to take care about waiting for a few μs (40)
before sensing the hallflags.
The hallport output current is sensed. In case of an
overcurrent (short to GND) the hallport overcurrent flag
(H0OCF) is set and the current is limited. For proper
operation of the current limitation an external capacitor
(>100nF) close to the H0 terminal is required.
Current
Sense
H0EN
VSUP
H0EN
H0F
H0MS
H0MS
VDD
10k
H0
H0PD
Current
Sense
H0EN
VSUP
V
H0F
2 pin hall sensor
GND
H0
>0.1uF
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