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參數(shù)資料
| 型號： | 933106600112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 933106600112 |
1996 Jul 30
2
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF245A; BF245B; BF245C
FEATURES
Interchangeability of drain and source connections
Frequencies up to 700 MHz.
APPLICATIONS
LF, HF and DC amplifiers.
DESCRIPTION
General purpose N-channel symmetrical junction
field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
1
d
drain
2
s
source
3
g
gate
Fig.1
Simplified outline (TO-92 variant)
and symbol.
handbook, halfpage
1
3
2
MAM257
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
±30
V
VGSoff
gate-source cut-off voltage
ID = 10 nA; VDS =15V
0.25
8V
VGSO
gate-source voltage
open drain
30
V
IDSS
drain current
VDS = 15 V; VGS =0
BF245A
2
6.5
mA
BF245B
6
15
mA
BF245C
12
25
mA
Ptot
total power dissipation
Tamb =75 °C
300
mW
yfs
forward transfer admittance
VDS = 15 V; VGS =0;
f = 1 kHz; Tamb =25 °C
3
6.5
mS
Crs
reverse transfer capacitance
VDS = 20 V; VGS = 1V;
f = 1 MHz; Tamb =25 °C
1.1
pF
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