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參數(shù)資料
| 型號(hào)： | 933106600112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁(yè)數(shù)： | 8/13頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | 933106600112 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
1996 Jul 30
4
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cis
input capacitance
VDS = 20 V; VGS = 1 V; f = 1 MHz
4
pF
Crs
reverse transfer capacitance
VDS = 20 V; VGS = 1 V; f = 1 MHz
1.1
pF
Cos
output capacitance
VDS = 20 V; VGS = 1 V; f = 1 MHz
1.6
pF
gis
input conductance
VDS =15V;VGS = 0; f = 200 MHz
250
S
gos
output conductance
VDS =15V;VGS = 0; f = 200 MHz
40
S
yfs
forward transfer admittance
VDS =15V;VGS = 0; f = 1 kHz
3
6.5
mS
VDS =15V;VGS = 0; f = 200 MHz
6
mS
yrs
reverse transfer admittance
VDS =15V;VGS = 0; f = 200 MHz
1.4
mS
yos
output admittance
VDS =15V;VGS =0;f=1kHz
25
S
fgfs
cut-off frequency
VDS =15V;VGS =0;gfs = 0.7 of its
value at 1 kHz
700
MHz
F
noise gure
VDS =15V;VGS = 0; f = 100 MHz;
RG =1k (common source);
input tuned to minimum noise
1.5
dB
handbook, halfpage
10
103
102
101
1
150
50
0
MGE785
100
typ
Tj (°C)
IGSS
(nA)
Fig.2
Gate leakage current as a function of
junction temperature; typical values.
VDS = 0; VGS = 20 V.
Fig.3
Transfer characteristics for BF245A;
typical values.
handbook, halfpage
VGS (V)
ID
(mA)
6
0
40
2
MGE789
5
4
3
2
1
VDS = 15 V; Tj =25 °C.
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