參數(shù)資料
型號(hào)： 933163490215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝： PLASTIC, SMD, SST3, 3 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 93K
代理商： 933163490215
1997 Dec 05
2
Philips Semiconductors
Product specication
N-channel eld-effect transistors
BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note
1. Drain and source are interchangeable.
PIN
SYMBOL
DESCRIPTION
1
d
drain(1)
2
s
source(1)
3
g
gate
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Fig.1 Simplified outline and symbol.
Marking codes:
BFR30: M1p.
BFR31: M2p.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±25
V
VGSO
gate-source voltage
open drain
25
V
Ptot
total power dissipation
Tamb ≤ 40 °C
250
mW
IDSS
drain current
VGS = 0; VDS =10V
BFR30
4
10
mA
BFR31
1
5
mA
y
fs
common-source transfer admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30
1
4
mS
BFR31
1.5
4.5
mS
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