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參數(shù)資料
| 型號： | 933163490215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 933163490215 |
1997 Dec 05
4
Philips Semiconductors
Product specication
N-channel eld-effect transistors
BFR30; BFR31
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IGSS
gate cut-off current
VDS = 0; VGS = 10 V
0.2
nA
IDSS
drain current
VGS = 0; VDS =10V
BFR30
4
10
mA
BFR31
1
5
mA
VGS
gate-source voltage
ID = 1 mA; VDS =10V
BFR30
0.7
3V
BFR31
0
1.3
V
VGS
gate-source voltage
ID =50 A; VDS =10V
BFR30
4V
BFR31
2V
VGSoff
gate-source cut-off voltage
ID = 0.5 nA; VDS =10V
BFR30
5V
BFR31
2.5
V
y
fs
common-source transfer admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz;
Tamb =25 °C
BFR30
1
4
mS
BFR31
1.5
4.5
mS
y
fs
common-source transfer admittance
ID = 200 A; VDS = 10 V; f = 1 kHz;
Tamb =25 °C
BFR30
0.5
mS
BFR31
0.75
mS
y
os
common source output admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30
40
S
BFR31
25
S
y
os
common source output admittance
ID = 200 A; VDS = 10 V; f = 1 kHz
BFR30
20
S
BFR31
15
S
Cis
input capacitance
VDS =10V; f=1MHz
ID =1mA
4pF
ID = 0.2 nA
4pF
Crs
feedback capacitance
VDS = 10 V; f = 1 MHz; Tamb =25 °C
ID =1mA
1.5
pF
ID = 200 A
1.5
pF
Vn
equivalent input noise voltage
ID = 200 A; VDS =10V;
B = 0.6 to 100 Hz
0.5
V
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