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參數(shù)資料
| 型號： | 933172540215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 89K |
| 代理商： | 933172540215 |
1997 Oct 28
2
Philips Semiconductors
Product specication
NPN 2 GHz wideband transistor
BFR53
FEATURES
Very low intermodulation distortion
Very high power gain.
APPLICATIONS
Thick and thin-film circuits.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
Marking code: N1.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
18
V
VCEO
collector-emitter voltage
open base
10
V
ICM
peak collector current
f
> 1 MHz
100
mA
Ptot
total power dissipation
Ts ≤ 85 °C
250
mW
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb =25 °C
0.9
pF
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tj =25 °C
2
GHz
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz;
Tamb =25 °C
10.5
dB
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
18
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
50
mA
ICM
peak collector current
f
> 1 MHz
100
mA
Ptot
total power dissipation
Ts ≤ 85 °C (note 1)
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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