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參數(shù)資料
| 型號： | 933172540215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | 933172540215 |
1997 Oct 28
3
Philips Semiconductors
Product specication
NPN 2 GHz wideband transistor
BFR53
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =10V
50
nA
hFE
DC current gain
IC = 25 mA; VCE = 5 V; see Fig.2
25
IC = 50 mA; VCE = 5 V; see Fig.2
25
Cc
collector capacitance
IE =ie = 0; VCB = 5 V; f = 1 MHz;
see Fig.3
0.9
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.5
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb =25 °C
0.9
pF
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
see Fig.4
2
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 5 V; f = 800 MHz;
Tamb =25 °C; see Fig.5
10.5
dB
F
noise gure
IC = 2 mA; VCE = 5 V; f = 500 MHz;
Tamb =25 °C; see Fig.6
5dB
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
-------------------------------------------------------------- dB˙
=
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