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參數(shù)資料
| 型號： | 933448540112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 933448540112 |
August 1986
7
Philips Semiconductors
Product specication
UHF linear power transistor
BLW33
APPLICATION INFORMATION
Note
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
List of components:
fvision (MHz)
VCE (V)
IC (mA)
Th (°C)
dim (dB) (1)
Po sync (W) (1)
GP (dB)
860
25
300
70
60
>
1,0
>
10
860
25
300
70
60
typ.
1,07
typ.
10,5
860
25
300
25
60
typ.
1,15
typ.
10,5
C1 = C3 = 2 to 18 pF lm dielectric trimmer (cat. no. 2222 809 05003)
C2 = C6 = C8 = 1 to 3,5 pF lm dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 8 mm
and 46 mm respectively from transistor edge
C4 = C5 = 4,3 pF multilayer ceramic chip capacitor (ATC 100A-4R3-C-PX-50)
C7 = 1,8 to 10 pF lm dielectric trimmer (cat. no. 2222 809 05002)
C9 = C12 = 1 nF chip capacitor
C10 = 100 nF polyester capacitor
C11 = C13 = 470 nF polyester capacitor
C14 = 10 nF polyester capacitor
C15 = 3,3
F/40 F solid aluminium electrolytic capacitor
L1 = stripline (5,2 mm
× 4,5 mm)
L2 = stripline (13,2 mm
× 4,5 mm)
L3 = stripline (15,0 mm
× 4,5 mm)
L4 = micro choke 0,47
H (cat. no. 4322 057 04770)
L5 = stripline (see Fig.9 printed-circuit board layout)
L6 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2
× 4 mm
L7 = stripline (37,0 mm
× 4,5 mm)
L8 = stripline (13,5 mm
× 4,5 mm)
Fig.8 Test circuit at fvision = 860 MHz.
handbook, full pagewidth
MGP448
+VBB
+VCC
50
L1
L2
L3
T.U.T.
C1
C3
C4
L4
C9
C2
C10
C11
C12
C13
C14
C15
L6
C5
C8
C6
L8
C7
L7
L5
50
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