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參數(shù)資料
| 型號： | 933448540112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 81K |
| 代理商： | 933448540112 |
August 1986
3
Philips Semiconductors
Product specication
UHF linear power transistor
BLW33
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE =0
VCESM
max.
50 V
open base
VCEO
max.
30 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current
d.c. or average
IC
max.
1,25 A
(peak value); f
> 1 MHz
ICM
max.
1,9 A
Total power dissipation up to Tmb =25 °CPtot
max.
19,3 W
Storage temperature
Tstg
65 to +150 °C
Operating junction temperature
Tj
max.
200
°C
Fig.2 D.C. SOAR.
(1) Second breakdown limit (independent of temperature).
handbook, halfpage
10
1
101
MGP442
110
102
IC
(A)
VCE (V)
Tmb = 25 °C
Th = 70 °C
(1)
Fig.3 Power derating curve vs. temperature.
handbook, halfpage
0
50
100
20
15
5
0
10
MGP443
Ptot
(W)
Th (°C)
THERMAL RESISTANCE (see Fig.4)
From junction to mounting base
(dissipation = 7,5 W; Tmb = 74,5 °C; i.e. Th =70 °C)
Rth j-mb
=
10,1 K/W
From mounting base to heatsink
Rth mb-h
=
0,6 K/W
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