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參數(shù)資料
| 型號(hào)： | 933448550112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 80K |
| 代理商： | 933448550112 |
August 1986
2
Philips Semiconductors
Product specication
UHF linear power transistor
BLW34
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1
4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
Note
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
MODE OF OPERATION
fvision
MHz
VCE
V
IC
mA
Th
°C
dim(1)
dB
Po sync (1)
W
Gp
dB
class-A; linear amplier
860
25
600
70
60
>
1,8
>
9
860
25
600
25
60
typ.
2,15
typ.
10,2
PIN CONFIGURATION
Fig.1 Simplified outline. SOT122A.
handbook, halfpage
Top view
MBK187
3
1
2
4
PINNING - SOT122A.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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