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參數(shù)資料
| 型號(hào)： | 933448550112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 80K |
| 代理商： | 933448550112 |
August 1986
5
Philips Semiconductors
Product specication
UHF linear power transistor
BLW34
CHARACTERISTICS
Tj =25 °C unless otherwise specied
Notes
1. Measured under pulse conditions: tp ≤ 300 s; δ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 s; δ≤ 0,01.
Collector-emitter breakdown voltage
VBE = 0; IC = 8 mA
V(BR)CES
>
50 V
open base; IC = 60 mA
V(BR)CEO
>
30 V
Emitter-base breakdown voltage
open collector; IE = 4 mA
V(BR)EBO
>
4V
Collector cut-off current
VBE = 0; VCE = 30 V
ICES
<
2,0 mA
VBE = 0; VCE = 30 V; Tj = 175 °CICES
<
5,0 mA
D.C. current gain
>
typ.
20
40
IC = 600 mA; VCE = 25 V
hFE
IC = 600 mA; VCE = 25 V; Tj = 175 °ChFE
<
120
Collector-emitter saturation voltage (1)
IC = 1,2 A; IB = 0,12 A
VCEsat
typ.
450 mV
Transition frequency at f = 500 MHz (2)
IE = 0,6 A; VCB = 25 V
fT
typ.
3,3 GHz
I
E = 1,2 A; VCB = 25 V
fT
typ.
3,0 GHz
Collector capacitance at f = 1 MHz
IE =Ie = 0; VCB = 25 V
Cc
typ.
13,5 pF
Feedback capacitance at f = 1 MHz
IC = 40 mA; VCE = 25 V
Cre
typ.
8,4 pF
Collector-stud capacitance
Ccs
typ.
1,2 pF
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