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參數(shù)資料
| 型號(hào)： | 933461190112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 933461190112 |
September 1995
2
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFQ68
DESCRIPTION
NPN transistor mounted in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very
high output voltage capabilities.
It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power
band IV and V equipment.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT122A.
fpage
Top view
MBK187
3
1
2
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
18
V
IC
collector current
300
mA
Ptot
total power dissipation
up to Tc =110 °C
4.5
W
fT
transition frequency
IC = 240 mA; VCE = 15 V; f = 500 MHz;
Tj =25 °C
4
GHz
Vo
output voltage
Ic = 240 mA; VCE = 15 V;
dim = 60 dB; RL =75 ;
f(p+qr) = 793.25 MHz; Tamb =25 °C
1.6
V
PL1
output power at 1 dB gain
compression
Ic = 240 mA; VCE = 15 V; RL =75 ;
f = 800 MHz; Tamb =25 °C
28
dBm
ITO
third order intercept point
Ic = 240 mA; VCE = 15 V; RL =75 ;
f = 800 MHz; Tamb =25 °C
47
dBm
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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