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參數(shù)資料
| 型號： | 933461190112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 933461190112 |
September 1995
4
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFQ68
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. Measured with emitter and base grounded.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
3. dim = 60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB; fp = 795.25 MHz;
Vq =Vo 6 dB; fq = 803.25 MHz;
Vr =Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
4. IC = 240 mA; VCE = 15 V; RL =75 ; Tamb =25 °C;
Pp = ITO 6 dB; fp = 800 MHz;
Pq = ITO 6 dB; fq = 801 MHz;
measured at f(2qp) = 802 MHz and at f(2pq) = 799 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 15 V
50
A
hFE
DC current gain
IC = 240 mA; VCE = 15 V
25
75
fT
transition frequency
IC = 240 mA; VCE = 15 V;
f = 500 MHz
4
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 15 V; f = 1 MHz
3.8
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
20
pF
Cre
feedback capacitance
IC = 0; VCE = 15 V; f = 1 MHz
2.3
pF
Ccs
collector-stud capacitance
note 1
0.8
pF
GUM
maximum unilateral power gain
(note 2)
IC = 240 mA; VCE = 15 V;
f = 800 MHz; Tamb =25 °C
13
dB
Vo
output voltage
note 3
1.6
V
PL1
output power at 1 dB gain
compression (see Fig.2)
IC = 240 mA; VCE = 15 V; RL =75 ;
Tamb =25 °C;
measured at f = 800 MHz
28
dBm
ITO
third order intercept point (see
Fig.2)
note 4
47
dBm
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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