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參數(shù)資料
| 型號(hào)： | 933467610126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 933467610126 |
1999 May 28
2
Philips Semiconductors
Product specication
NPN Darlington transistors
BC875; BC879
FEATURES
High DC current gain (min. 1000)
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Relay drivers.
DESCRIPTION
NPN Darlington transistor in a TO-92 (SOT54) plastic
package. PNP complement: BC878.
PINNING
PIN
DESCRIPTION
1
base
2
collector
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
MAM307
1
2
3
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC875
60
V
BC879
100
V
VCES
collector-emitter voltage
VBE =0
BC875
45
V
BC879
80
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
2A
IB
base current (DC)
0.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
0.83
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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