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參數(shù)資料
| 型號(hào)： | 933467610126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 933467610126 |
1999 May 28
3
Philips Semiconductors
Product specication
NPN Darlington transistors
BC875; BC879
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICES
collector cut-off current
BC875
VBE = 0; VCE =45V
50
nA
BC879
VBE = 0; VCE =80V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =4V
50
nA
hFE
DC current gain
IC = 150 mA; VCE = 10 V; see Fig.2
1000
IC = 0.5 A; VCE = 10 V; see Fig.2
2000
VCEsat
collector-emitter saturation voltage
IC = 0.5 A; IB = 0.5 mA
1.3
V
IC = 1 A; IB =1mA
1.8
V
VBEsat
base-emitter saturation voltage
IC = 1 A; IB =1mA
2.2
V
fT
transition frequency
IC = 0.5 A; VCE = 5 V; f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA
500
ns
toff
turn-off time
1300
ns
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