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參數(shù)資料
| 型號： | 933674750115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, MPT3, SMD, SC-62, UPAK-3 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 933674750115 |
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS logic level FET
Product data
Rev. 01 — 24 October 2001
6 of 15
9397 750 08649
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 40 A; VGS =0V;
-
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
-
260
-
ns
Qr
recovered charge
-
531
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd95
0
50
100
150
200
250
300
350
400
02
46
8
10
VDS (V)
ID
(A)
2.2
3
4
10
6
7
8
VGS = 5 V
03nd94
2
3
4
5
36
9
12
15
VGS (V)
RDSon
(m
)
03nd96
0
2
4
6
8
10
0
100
200
300
400
ID (A)
RDSon
(m
)
VGS = 3 V
4
5
3.8
3.6
3.4
3.2
10
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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