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參數(shù)資料
| 型號(hào)： | 933674750115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, MPT3, SMD, SC-62, UPAK-3 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 933674750115 |
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS logic level FET
Product data
Rev. 01 — 24 October 2001
8 of 15
9397 750 08649
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nd93
0
20
40
60
80
100
01234
VGS (V)
ID
(A)
Tj = 175 C
Tj = 25 C
03nd91
0
1
2
3
4
5
0
20
40
60
80
100
120
140
QG (nC)
VGS
(V)
VDD = 32 V
VDD = 14 V
03nd90
0
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
IS
(A)
Tj = 175 C
Tj = 25 C
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