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參數資料
| 型號： | 933783030114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數： | 7/14頁 |
| 文件大小： | 108K |
| 代理商： | 933783030114 |
1997 Feb 19
2
Philips Semiconductors
Product specication
NPN microwave power transistor
RX1214B300Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and reduces
thermal resistance
Internal input and output matching networks for an easy
circuit design.
APPLICATIONS
Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol.
olumns
e
c
b
MAM045
1
2
Top view
3
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C wideband amplier.
MODE OF OPERATION
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(
)
Class-C
tp = 150 s; δ =5%
1.2 to 1.4
50
≥250
≥7
≥35
see Fig 6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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