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參數(shù)資料
| 型號(hào)： | 933783030114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | 933783030114 |
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1997 Feb 19
4
Philips Semiconductors
Product specication
NPN microwave power transistor
RX1214B300Y
THERMAL CHARACTERISTICS
Tj = 100 °C unless otherwise specied
Notes
1. See “
Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied
APPLICATION INFORMATION
Microwave performance at Tmb ≤ 25 °C in a common base class C wideband amplier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
0.8
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
tp = 150 s; δ =5%;
notes 1 and 2
0.22
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 140 mA; IE =0
65
V
V(BR)CES
collector-emitter breakdown voltage
IC = 140 mA; RBE =0
60
V
V(BR)EBO
emitter-base breakdown voltage
IC = 0; IE =20mA
3
V
ICBO
collector cut-off current
VCB = 50 V; IE =0
14
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC =0
1.4
mA
MODE OF OPERATION
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(
)
Pulsed
tp = 150 s; δ =5%
1.2 to 1.4
50
≥250
typ. 320
≥7
typ. 8
≥35
typ. 40
see Fig 6
tp = 300 s; δ = 10 %
1.2 to 1.4
50
typ. 300
typ. 7.5
typ. 35
see Fig 6
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