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參數資料
| 型號： | 933783040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 933783040114 |
1997 Feb 18
2
Philips Semiconductors
Product specication
NPN microwave power transistor
RZ1214B35Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input matching ensures good stability and
allows an easier design of wideband circuits.
APPLICATIONS
Common base class-C wideband pulsed power
amplifiers for L-band radar applications in the
1.2 to 1.4 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common base class-C wideband amplier.
MODE OF OPERATION
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(
)
Class-C; tp = 150 s; δ = 5%
1.2 to 1.4
50
≥35
≥7
≥30
see Fig 4
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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