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參數(shù)資料
| 型號： | 933783040114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 933783040114 |
1997 Feb 18
5
Philips Semiconductors
Product specication
NPN microwave power transistor
RZ1214B35Y
Fig.3 Wideband test circuit for class C operation at 1.2 to 1.4 GHz.
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity:
ε
r = 10.
handbook, full pagewidth
MGK061
5
0.59
5
3
8
5
10
5.15
5
8
3
0.59
19.5
VCC
output
input
,,
,,,,,,
,,,,,,,
7
5.75
11.5
100 pF
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
Class C operation; VCE = 50 V; PL = 35 W; Zo =5 ; tp = 150 s; δ= 5%.
handbook, full pagewidth
MCD626
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
– j
1.4 GHz
Zi
1.2
1.3
1.4 GHz
Z L
1.2
0.5
1
0.2
10
5
2
1.3
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