參數資料
型號: 933790950112
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, 3 PIN
文件頁數: 5/12頁
文件大小: 65K
代理商: 933790950112
April 1995
2
Philips Semiconductors
Product specication
P-channel enhancement mode vertical
D-MOS transistor
BST120
DESCRIPTION
P-channel vertical D-MOS transistor
in SOT89 envelope and intended for
use in relay, high-speed and
line-transformer drivers, using SMD
technology.
FEATURES
Very low R
DS(on)
Direct interface to C-MOS
High-speed switching
No second breakdown
QUICK REFERENCE DATA
PINNING - SOT89
Drain-source voltage
VDS
max.
60 V
Gate-source voltage (open drain)
±VGSO
max.
20 V
Drain current (DC)
I
D
max.
0,3 A
Total power dissipation up to Tamb =25 °CPtot
max.
1 W
Drain-source ON-resistance
typ.
max.
4,5
6
I
D = 200 mA; VGS = 10 V
RDS(on)
Transfer admittance
I
D = 200 mA; VDS = 15 V
Yfs
typ.
200 mS
1 = source
2 = drain
3 = gate
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
marking: LM
handbook, halfpage
12
3
MAM354
Bottom view
s
d
g
相關PDF資料
PDF描述
933790950115 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
933790960115 250 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
933792100215 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933792110215 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933677220235 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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