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參數資料
| 型號： | 933790950112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數： | 7/12頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 933790950112 |
April 1995
4
Philips Semiconductors
Product specication
P-channel enhancement mode vertical
D-MOS transistor
BST120
CHARACTERISTICS
Tj =25 °C unless otherwise specied
Drain-source breakdown voltage
I
D =10 A; VGS =0
V(BR)DSS
min.
60 V
Drain-source leakage current
VDS = 48 V; VGS =0
IDSS
max.
1
A
Gate-source leakage current
VGS = 20 V; VDS =0
IGSS
max.
100 nA
Gate threshold voltage
min.
max.
1.5
3.5
V
ID = 1 mA; VDS =VGS
VGS(th)
Drain-source ON-resistance
typ.
max.
4.5
6
ID = 200 mA; VGS = 10 V
RDS(on)
Transfer admittance
I
D = 200 mA; VDS = 15 V
Yfs
typ.
200 mS
Input capacitance at f = 1 MHz
typ.
max.
55
70
pF
V
DS = 10 V; VGS =0
Ciss
Output capacitance at f = 1 MHz
typ.
max.
30
45
pF
VDS = 10 V; VGS =0
Coss
Feedback capacitance at f = 1 MHz
typ.
max.
8
12
pF
VDS = 10 V; VGS = 0
Crss
Switching times (see Figs 2 and 3)
ton
toff
typ.
4
20
ns
ID = 200 mA; VDD = 50 V; VGS = 0 to 10 V
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