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參數(shù)資料
| 型號(hào)： | 933793490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 933793490112 |
2001 Nov 15
2
Philips Semiconductors
Product specication
550 MHz, 18.5 dB gain power doubler amplier
BGD502
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure optimal reliability.
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5+VB
7, 8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 550 MHz
18.8
20.8
dB
Itot
total current consumption (DC)
VB =24V
435
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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