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參數(shù)資料
| 型號(hào)： | 933793490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 933793490112 |
2001 Nov 15
3
Philips Semiconductors
Product specication
550 MHz, 18.5 dB gain power doubler amplier
BGD502
CHARACTERISTICS
Table 1
Bandwidth 40 to 550 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75 .
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo
6 dB;
fr = 549.25 MHz; Vr = Vo
6 dB; measured at fp + fq fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 550 MHz
18.8
20.8
dB
SL
slope cable equivalent
f = 40 to 550 MHz
0.2
2.2
dB
FL
atness of frequency response
f = 40 to 550 MHz
±0.3
dB
s11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 550 MHz
18
dB
s22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 550 MHz
18
dB
s21
phase response
f = 50 MHz
+135
+225
deg
CTB
composite triple beat
77 channels at;
Vo = 44 dBmV;
measured at 547.25 MHz
65
dB
Xmod
cross modulation
77 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
68
dB
CSO
composite second order distortion
77 channels at;
Vo = 44 dBmV;
measured at 548.5 MHz
62
dB
d2
second order distortion
note 1
72
dB
Vo
output voltage
dim = 60 dB; note 2
64
dBmV
NF
noise gure
f = 550 MHz
8dB
Itot
total current consumption (DC)
note 3
415
435
mA
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