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參數(shù)資料
| 型號(hào)： | 933978490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 933978490112 |
1998 Jul 29
4
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF368
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 100 mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS =32V
5mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
1
A
VGSth
gate-source threshold voltage
ID = 100 mA; VDS =10V
2
4.5
V
GS
gate-source voltage difference of
both transistor sections
ID = 100 mA; VDS =10V
100
mV
gfs
forward transconductance
ID = 8 A; VDS = 10 V
5
7.5
S
gfs1/gfs2
forward transconductance ratio
of both transistor sections
ID = 8 A; VDS = 10 V
0.9
1.1
RDSon
drain-source on-state resistance
ID = 8 A; VDS =10V
0.1
0.15
IDSX
on-state drain current
VGS = 10 V; VDS =10V
37
A
Cis
input capacitance
VGS = 0; VDS =32V; f=1MHz
495
pF
Cos
output capacitance
VGS = 0; VDS =32V; f=1MHz
340
pF
Crs
feedback capacitance
VGS = 0; VDS =32V; f=1MHz
40
pF
Cd-f
drain-ange capacitance
5.4
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
VDS =10V.
handbook, halfpage
0
5
MGP229
101
110
4
3
2
1
ID (A)
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
5
10
20
60
20
0
40
MGP230
15
ID
(A)
VGS (V)
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