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參數(shù)資料
| 型號(hào)： | 933978490112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 933978490112 |
1998 Jul 29
6
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF368
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th =25 °C; Rth mb-h = 0.15 K/W unless otherwise specied. RF performance in CW operation in a common source
class-AB circuit. RGS = 536 per section; optimum load impedance per section = 1.34 + j0.34 ; VDS =32V.
Note
1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
Ruggedness in class-AB operation
The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the
following conditions:
VDS = 32 V; f = 225 MHz at rated output power.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
G
p
(dB)
(note 1)
ηD
(%)
CW, class-AB
225
32
2
× 250
300
>12
>1
>55
typ. 13.5
typ. 0.4
typ. 62
225
28
2
× 250
300
typ. 13
typ. 0.7
typ. 68
225
35
2
× 250
300
typ. 14
typ. 0.2
typ. 60
175
28
2
× 250
300
typ. 15
typ. 0.5
typ. 70
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