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參數(shù)資料
| 型號： | 933978500112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 933978500112 |
November 1992
2
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF521
FEATURES
High power gain
Easy power control
Gold metallization
Good thermal stability
Withstands full load mismatch
Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless envelope,
with a ceramic cap. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN
DESCRIPTION
1
source
2
gate
3
drain
4
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
ook, halfpage
2
1
4
3
MSB007
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
500
12.5
2
> 10
> 50
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