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| 型號(hào)： | 933978500112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 11/17頁(yè) |
| 文件大小： | 126K |
| 代理商： | 933978500112 |
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November 1992
3
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Mounted on printed circuit board, see Fig.12.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
40
V
±VGS
gate-source voltage
20
V
ID
DC drain current
1A
Ptot
total power dissipation
up to Tmb =25 °C
10
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
THERMAL
RESISTANCE
Rth j-mb
thermal resistance from junction to mounting base
17.5 K/W
Rth j-a
thermal resistance from junction to ambient (note 1)
75 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDS(on).
(2) Tmb =25 °C.
handbook, halfpage
0.1
1
10
100
5
(1)
ID
(A)
VDS (V)
MRA989
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
16
12
4
0
8
120
MDA486
(1)
(2)
Ptot
(W)
Tmb ( °C)
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