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參數(shù)資料
| 型號： | 933978520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 12/21頁 |
| 文件大小： | 179K |
| 代理商： | 933978520112 |
1996 Oct 21
2
Philips Semiconductors
Product Specication
VHF push-pull power MOS transistor
BLF278
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS
Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT262A1
PIN
SYMBOL
DESCRIPTION
1d1
drain 1
2d2
drain 2
3g1
gate 1
4g2
gate 2
5
s
source
Fig.1 Simplified outline and symbol.
12
34
MAM098
Top view
55
d
g
s
d
g
QUICK REFERENCE DATA
RF performance at Th =25 °C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
108
50
300
>20
>60
CW, class-C
108
50
300
typ. 18
typ. 80
CW, class-AB
225
50
250
>14
typ. 16
>50
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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