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| 型號(hào)： | 933978520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 4/21頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | 933978520112 |
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1996 Oct 21
12
Philips Semiconductors
Product Specication
VHF push-pull power MOS transistor
BLF278
Fig.14 Input impedance as a function of frequency
(series components), typical values per
section.
Class-B operation; VDS = 50 V; IDQ =2 × 0.1 A;
RGS =4 (per section); PL = 300 W.
handbook, halfpage
25
75
125
f (MHz)
175
2
1
Zi
(
)
ri
xi
1
2
0
MGE685
Fig.15 Load impedance as a function of frequency
(series components), typical values per
section.
Class-B operation; VDS = 50 V; IDQ =2 × 0.1 A;
RGS =4 (per section); PL = 300 W.
handbook, halfpage
25
75
125
f (MHz)
175
8
6
ZL
(
)
XL
RL
2
0
4
MGE686
Fig.16 Definition of MOS impedance.
handbook, halfpage
MBA379
Zi
ZL
Fig.17 Power gain as a function of frequency,
typical values per section.
Class-B operation; VDS = 50 V; IDQ =2 × 0.1 A;
RGS =4 (per section); PL = 300 W.
handbook, halfpage
25
30
20
10
0
75
125
175
MGE687
f (MHz)
Gp
(dB)
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