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參數(shù)資料
| 型號(hào)： | 934022900115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 934022900115 |
June 1994
2
Philips Semiconductors
Product specication
NPN 1 GHz wideband transistor
BF547W
FEATURES
Stable oscillator operation
High current gain
Good thermal stability.
APPLICATIONS
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Marking code: E2.
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the “Quick reference data” and “Limiting values”
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
20
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
up to Ts =63 °C; note 1
300
mW
hFE
DC current gain
IC = 2 mA; VCE = 10 V
40
95
250
Cre
feedback capacitance
IC = 0; VCB =10V; f=1MHz
1
pF
fT
transition frequency
IC = 15 mA; VCE =10V;
f = 500 MHz
0.8
1.2
1.6
GHz
GUM
maximum unilateral power gain
IC = 1 mA; VCE =10V;
f = 100 MHz; Tamb =25 °C
20
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
up to Ts =63 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
+150
°C
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