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參數(shù)資料
| 型號： | 934022900115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 934022900115 |
June 1994
3
Philips Semiconductors
Product specication
NPN 1 GHz wideband transistor
BF547W
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C (unless otherwise specied).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =63 °C; note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
IC = 0.01 mA; IE =0
30
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 10 mA; IB =0
20
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.01 mA; IC =0
3V
ICBO
collector cut-off current
IE = 0; VCB =10V
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 10 V
40
95
250
Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz
1
pF
fT
transition frequency
IC = 15 mA; VCE =10V;
f = 500 MHz
0.8
1.2
1.6
GHz
GUM
maximum unilateral power gain;
note 1
IC = 1 mA; VCE =10V;
f = 100 MHz; Tamb =25 °C;
20
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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