參數(shù)資料
型號: 934024460135
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.6 A, 600 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SO-2
文件頁數(shù): 4/11頁
文件大?。?/td> 91K
代理商: 934024460135
1999 Nov 11
2
Philips Semiconductors
Product specication
General purpose
controlled avalanche rectiers
BYD17 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Shipped in 8 mm embossed tape
Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
BYD17D
17D PH
BYD17G
17G PH
BYD17J
17J PH
BYD17K
17K PH
BYD17M
17M PH
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD17D
200
V
BYD17G
400
V
BYD17J
600
V
BYD17K
800
V
BYD17M
1000
V
VRWM
crest working reverse voltage
BYD17D
200
V
BYD17G
400
V
BYD17J
600
V
BYD17K
800
V
BYD17M
1000
V
VR
continuous reverse voltage
BYD17D
200
V
BYD17G
400
V
BYD17J
600
V
BYD17K
800
V
BYD17M
1000
V
相關(guān)PDF資料
PDF描述
933812260135 0.6 A, 800 V, SILICON, SIGNAL DIODE
933812250135 0.6 A, 600 V, SILICON, SIGNAL DIODE
933812240135 0.6 A, 400 V, SILICON, SIGNAL DIODE
933812230135 0.6 A, 200 V, SILICON, SIGNAL DIODE
933812250115 0.6 A, 600 V, SILICON, SIGNAL DIODE
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