- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42367 > 934024460135 (NXP SEMICONDUCTORS) 0.6 A, 600 V, SILICON, SIGNAL DIODE PDF資料下載
參數(shù)資料
| 型號： | 934024460135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.6 A, 600 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SO-2 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 934024460135 |
1999 Nov 11
3
Philips Semiconductors
Product specication
General purpose
controlled avalanche rectiers
BYD17 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
IF(AV)
average forward current
Ttp = 105 °C;
averaged over any 20 ms period;
see Figs 2 and 4
1.5
A
Tamb =65 °C; PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
0.6
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
20
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
7mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.5
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max; see Fig.6
0.93
V
IF = 1 A; see Fig.6
1.05
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYD17D
225
V
BYD17G
450
V
BYD17J
650
V
BYD17K
900
V
BYD17M
1100
V
IR
reverse current
VR =VRRMmax; see Fig.7
1
A
VR =VRRMmax; Tj = 165 °C; see Fig.7
100
A
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.10
3
s
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
21
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
30
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
相關PDF資料 |
PDF描述 |
|---|---|
| 933812260135 | 0.6 A, 800 V, SILICON, SIGNAL DIODE |
| 933812250135 | 0.6 A, 600 V, SILICON, SIGNAL DIODE |
| 933812240135 | 0.6 A, 400 V, SILICON, SIGNAL DIODE |
| 933812230135 | 0.6 A, 200 V, SILICON, SIGNAL DIODE |
| 933812250115 | 0.6 A, 600 V, SILICON, SIGNAL DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 934026020115 | 制造商:NXP Semiconductors 功能描述:Diode Switching 90V 0.15A 3-Pin SC-70 T/R |
| 934028880135 | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY 30V 0.2A SC70 |
| 934028900115 | 制造商:NXP Semiconductors 功能描述:Diode Schottky 30V 0.2A 3-Pin SC-70 T/R |
| 93403 | 制造商:Brady Corporation 功能描述: |
| 93-403 | 制造商:Southco 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。