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參數(shù)資料
| 型號(hào)： | 934025530135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.25 A, 85 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 60K |
| 代理商： | 934025530135 |
2002 May 28
2
Philips Semiconductors
Product specication
High-speed switching diode
BAS216
FEATURES
Small ceramic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
handbook, 4 columns
MAM139
ka
cathode mark
top view
side view
bottom view
ak
Fig.1 Simplified outline (SOD110) and symbol.
Marking code: A6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
note 1
250
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; see Fig.2; note 1
400
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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