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參數(shù)資料
| 型號： | 934025530135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.25 A, 85 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 60K |
| 代理商： | 934025530135 |
2002 May 28
3
Philips Semiconductors
Product specication
High-speed switching diode
BAS216
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3
IF =1mA
715
mV
IF =10mA
855
mV
IF =50mA
1V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR =25V
30
nA
VR =75V
1
A
VR =25V; Tj = 150 °C
30
A
VR =75V; Tj = 150 °C
50
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured
at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
200
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
315
K/W
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