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參數(shù)資料
| 型號(hào)： | 934031250115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.25 A, 125 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934031250115 |
1999 May 28
2
Philips Semiconductors
Product specication
Low-leakage diode
BAS45AL
FEATURES
Continuous reverse voltage:
max. 125 V
Repetitive peak forward current:
max. 625 mA
Low reverse current: max. 1 nA
Switching time: typ. 1.5 s.
APPLICATION
Low leakage current applications.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
Fig.1 Simplified outline (SOD80C) and symbol.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
125
V
VR
continuous reverse voltage
125
V
IF
continuous forward current
note 1; see Fig.2
250
mA
IFRM
repetitive peak forward current
625
mA
IFSM
non-repetitive peak forward current square wave; Tj =25 °C prior to
surge; see Fig.4
tp =1 s
4A
tp =1ms
1A
tp =1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
400
mW
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
175
°C
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