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參數(shù)資料
| 型號(hào)： | 934031250115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.25 A, 125 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 49K |
| 代理商： | 934031250115 |
1999 May 28
3
Philips Semiconductors
Product specication
Low-leakage diode
BAS45AL
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
see Fig.3
IF =1mA
780
mV
IF =10mA
860
mV
IF = 100 mA
1000
mV
IR
reverse current
see Fig.5
VR = 125 V; Emax = 100 lx
1nA
VR = 30 V; Tj = 125 °C; Emax = 100 lx
300
nA
VR = 125 V; Tj = 125 °C; Emax = 100 lx
500
nA
VR = 125 V; Tj = 150 °C; Emax = 100 lx
2
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
4pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.7
1.5
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
300
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
375
K/W
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