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參數(shù)資料
| 型號(hào)： | 934031850112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 15/21頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | 934031850112 |
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1996 Oct 21
3
Philips Semiconductors
Product Specication
VHF push-pull power MOS transistor
BLF278
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
VDS
drain-source voltage
110
V
VGS
gate-source voltage
±20
V
ID
drain current (DC)
18
A
Ptot
total power dissipation
up to Tmb =25 °C total device;
both sections equally loaded
500
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction
to mounting base
total device; both sections
equally loaded.
max. 0.35
K/W
Rth mb-h
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
max. 0.15
K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25 °C.
handbook, halfpage
1
10
100
1
10
100
(1)
500
I
D
(A)
V
(V)
DS
MRA988
(2)
Fig.3 Power derating curves.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
500
0
400
MGE616
120
300
200
100
Ptot
(W)
Th (°C)
(2)
(1)
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